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A punch-through (PT) IGBT and a non-punch-through (NPT) IGBT are each designed to block 1200 V and both have the same effective conducting area in the on-state

Electrical Engineering

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A punch-through (PT) IGBT and a non-punch-through (NPT) IGBT are each designed to block 1200 V and both have the same effective conducting area in the on-state. Estimate the relative on-state current capability of each device assuming that both devices have the same on-state voltage and drift region thickness as Wd(NPT) = 3 Wd(PT).