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Homework answers / question archive / Consider a silicon Zener diode
Consider a silicon Zener diode. The bandgap of silicon is Eg = 1.14 eV. We want to design the reverse break-down voltage to be 3V. Assume the reverse Zener breakdown occurs when the n-side conduction band edge, Ec, is 2.82 ev below the p-side valence band edge, Ev. Assume the dopant concentrations on the n-side and p-side are equal: NA=No. What should be the value of the dopant concentration?
