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1)Determine the resistivity for n- and p-type silicon at 300 °K for doping concentrations of (a)1 x 1013-3 cm, (b) 1 x 1014 cm-3 (c)1x 1015s cm-3, (d)1 x 1016 cm-3, (e)1 x 1017' cm-3, (f)1 x 10 18cm-3, and (g)1 x 1019 cm-3
1)Determine the resistivity for n- and p-type silicon at 300 °K for doping concentrations of (a)1 x 1013-3
cm,
(b) 1 x 1014 cm-3
(c)1x 1015s cm-3,
(d)1 x 1016 cm-3,
(e)1 x 1017' cm-3,
(f)1 x 10 18cm-3, and
(g)1 x 1019 cm-3.
2)Determine the resistivity for n-type 4H-Sic at 300 °K for doping concentrations of (a)1 x 1013 cm-3,
(b) 1 x 1014 cm-3
(c)1x 1015s cm-3,
(d)1 x 1016 cm-3,
(e)1 x 1017' cm-3,
(f)1 x 10 18cm-3, and
(g)1 x 1019 cm-3.
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