A punch-through (PT) IGBT and a non-punch-through (NPT) IGBT are each designed to block 1200 V and both have the same effective conducting area in the on-state

Electrical Engineering Sep 14, 2020

A punch-through (PT) IGBT and a non-punch-through (NPT) IGBT are each designed to block 1200 V and both have the same effective conducting area in the on-state. Estimate the relative on-state current capability of each device assuming that both devices have the same on-state voltage and drift region thickness as Wd(NPT) = 3 Wd(PT).