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A PHEMT device that has been fabricated in certain process

Electrical Engineering

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A PHEMT device that has been fabricated in certain process. The following equivalent circuit parameters of the device have been obtained from measurements: Ri = 4 0 Rds = 500 Q Cgs = 107 fF Cds = 0.12 pF Cgd = 0.800 fF gm = 80 ms Evaluate the corresponding unity current gain (threshold) frequency fr. Express your answer in GHz to one place after the decimal. 11.9